adva nced power electronics corp. 1/5 AP80N30W-HF-3 n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP80N30W-HF-3 is in the to-3p through-hole package which is g d s bv 300v low on-resistance simple drive requirement widely used in higher power commercial and industrial applications where an attached heatsink is required. this device is well suited for use in applications such as motor drives, inverteers and dc /dc converters . g d s to-3p (w) d (tab) o rdering information www.a-powerusa.com fast switching characteristics r 66 m w i 36 a AP80N30W-HF-3t b : in rohs-compliant , halogen-free to- 3p , shipped in tubes (1440 pcs/carton) ?2012 advanced power electronics corp. usa 201009153-3 symbol value units rthj-c maximum thermal resistance, junction-case 0. 6 c /w rthj-a max i mum thermal resistance, junction-ambient 40 c /w parameter symbol units v ds v v gs i d at t c =2 5 c i dm i dr i dr(pulse) p d at t c =2 5 c w /c i ar avalanche current a e ar single pulse avalanche energy 3 mj t stg t j storage temperature range total power dissipation 208 w -55 to 150 c operating junction temperature range -55 to 150 c linear derating factor 1.67 30 45 pulsed drain curren t 1 1 44 a gate-source voltage 30 continuous drain current 36 a parameter rating drain-source voltage 300 body-drain diode reverse drain current body-drain diode reverse drain peak current 1 36 a 1 44 a
adva nced power electronics corp. 2/5 AP80N30W-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. notes: 1. pulse width limited by maximum junction temperature. 2. pulse test 3. starting tj=25c , v dd =50v , l=1mh , r g =25w , i as =30a. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 300 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 66 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 - 4.5 v g fs forward transconductance v ds =10v, i d =30a - 56 - s drain-source leakage current v ds =300v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =240v, v gs =0v - - 200 ua i gss gate-source leakage v gs = 30v, v ds =0v - - 0.1 ua q g total gate charge 2 i d =30a - 117 180 nc q gs gate-source charge v ds =240v - 28 - nc q gd gate-drain ("miller") charge v gs =10v - 42 - nc t d(on) turn-on delay time 2 v ds =150v - 40 - ns t r rise time i d =30a - 90 - ns t d(off) turn-off delay time r g =10w - 165 - ns t f fall time v gs =10v - 95 - ns c iss input capacitance v gs =0v - 5700 9120 pf c oss output capacitance v ds =15v - 525 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =12a, v gs =0v - 310 - ns q rr reverse recovery charge di/dt=100a/s - 3.5 - c i dss
adva nced power electronics corp. 3/5 AP80N30W-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance 50 55 60 65 70 4567891 0 v gs gate-to-source voltage (v) r ds(on) (mw ) t c =25 o c i d =30a 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 20 40 60 80 100 120 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0 10 20 30 40 50 60 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
adva nced power electronics corp. 4/5 AP80N30W-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =240v q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 1 6 11 16 21 26 31 36 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90%
adva nced power electronics corp. 5/5 AP80N30W-HF-3 ?2012 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-3p marking information: product: ap80n30 w = rohs-compliant, halogen free to-3p date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 80n30w ywwsss millimeters min nom max a 4.50 4.80 5.10 b 0.80 1.00 1.30 b1 1.80 2.50 3.20 b2 1.30 -- 2.30 c 0.40 0.60 0.90 c1 1.40 -- 2.20 d 19.70 20.00 20.30 d1 14.70 15.00 15.30 e 15.30 -- 16.10 b2 e 4.45 5.45 6.45 l 17.50 -- 20.50 l2 1.00 -- 3.70 f 3.00 3.20 3.40 symbols c1 e b b1 c l d1 a f d e l2
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